-40%
P416A = 2N2089, 2N604, T316H, T354H transistor USSR Lot of 24 pcs
P416A = 2N2089, 2N604, T316H, T354H transistor USSR Lot of 24 pcs

P416A = 2N2089, 2N604, T316H, T354H transistor USSR Lot of 24 pcs

$ 2.48

Availability: 37 in stock
  • Item must be returned within: 30 Days
  • Return shipping will be paid by: Buyer
  • Restocking Fee: No
  • Brand: USSR
  • MPN: Does Not Apply
  • All returns accepted: Returns Accepted
  • Refund will be given as: Money Back
  • Condition: New, never used / NOS / New Old Stock /

    Description

    P416A = 2N2089, 2N604, T316H, T354H transistor
    USSR
    Lot of 24 pcs
    New, never used  / NOS / New Old Stock
    P416A
    P416A transistor pnp germanium alloy universal.
    The main technical characteristics of the transistor P416A:
    • The structure of the transistor: pnp
    • Pk max - Constant power dissipation Collector: 100 mW;
    • Pk t max - Dissipated power collector with heat: 360 mW;
    • fgr - Cut-off frequency of the transistor current gain for the common-emitter and common-base: not less than 60 MHz;
    • Ukbo samples - Breakdown voltage collector-base for a given reverse current collector and emitter open circuit: 12 V;
    • Uebo samples - Breakdown voltage emitter-base junction reverse current at a given emitter and collector open circuit 3;
    • Ik max - Maximum DC Collector Current: 25 mA;
    • Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and open emitter output: less than 3 mA;
    • h21e - Static current transfer ratio of the transistor small signal for the common-emitter: 60 ... 120;
    • CK - collector junction capacity: up to 8 pF;
    • Rke us - saturation resistance between the collector and emitter: less than 40 ohms
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